Principal Engineer - GaN Device Engineer

About the role

Renesas Electronics is looking for a Principal Engineer, GaN Device Engineer, based in Zhubei, Taiwan. The role leads the development of Gallium Nitride (GaN) power devices for high-efficiency power conversion, combining deep knowledge of GaN device physics and trapping mechanisms with hands-on characterization experience and strong cross-functional communication.

Key responsibilities

• Drive technical understanding of GaN device physics, charge trapping mechanisms and device reliability behavior.
• Define and evaluate new device architectures to improve performance, robustness and competitive differentiation.
• Lead advanced device characterization, data analysis and root-cause investigations to improve performance, yield and reliability.
• Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.

Required profile

• Ph.D. preferred, or M.S. in Electrical Engineering or a related field.
• 10+ years of semiconductor device R&D experience with a major focus on GaN technology.
• Proven technical leadership and ability to work across multidisciplinary teams.
• Fluent in both English and Chinese; business travel is required.

Required skills

• Hands-on experience with characterization techniques and trap analysis, including pulsed I-V (gate-lag and drain-lag), transient drain current and MOS interface trap analysis.
• Good-to-have: TCAD simulation tools such as Sentaurus or Silvaco, reliability failure models and degradation mechanisms, and familiarity with the AEC-Q101 standard.