Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

About the role

Renesas Electronics is looking for a Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer to join its MV Power Trench MOSFET team in Hsinchu. The engineer plays a key role in designing and developing next-generation MV shielded-gate trench MOSFET technologies, working closely with design, application and marketing teams as well as external foundry partners.

Key responsibilities

• Define and set up key process modules for next-generation MV shielded-gate trench MOSFET technologies.
• Perform wafer probing and analyze assembled product performance data for each development cycle.
• Analyze wafer-level electrical test results and package-level performance data for each iteration.
• Support derivative technology development based on proven technology platforms.
• Lead yield improvement activities and support technology transfer to mass production.
• Contribute to the development of derivative products based on established and mature technology platforms.

Required profile

• Ph.D. (preferred) or M.S. in Electrical Engineering, Physics or a related field.
• Up to 15 years of experience in power semiconductor device or process development, preferably on Si-based MV shielded-gate trench MOSFETs.
• Solid understanding of power device physics and semiconductor fabrication processes.
• Intermediate-level proficiency in written and spoken English and Japanese.

Required skills

• Hands-on experience with TCAD tools and simulation-based device analysis.