Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

About the role

We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team. The successful candidate will play a key role in the design and development of next‑generation MV shielded‑gate trench MOSFET technologies, collaborating with design, application, marketing, and external foundry partners.

Key responsibilities

• Define and establish key process modules for next‑generation MV shielded‑gate trench MOSFET technology.
• Set up key process modules required for the development of cutting‑edge MV shielded‑gate trench MOSFET technologies.
• Perform wafer probing and analyze assembled product performance data for each development cycle.
• Analyze wafer‑level electrical test results and package‑level performance data for each development iteration.
• Support derivative technology development based on proven technology platforms.
• Lead yield improvement activities and support technology transfer to mass production.
• Contribute to the development of derivative products based on established and mature technology platforms.

Required profile

• Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field.
• Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si‑based MV shielded‑gate trench MOSFETs.
• Solid understanding of power device physics and semiconductor fabrication processes.
• Hands‑on experience with TCAD tools and simulation‑based device analysis.
• Intermediate‑level proficiency in both written and spoken English and Japanese.

Required skills

• Power device physics
• Semiconductor fabrication processes
• TCAD tools and simulation‑based device analysis